[S2] 機能コアの材料科学Ⅰ(2)

[S2.28] The effect of Ti doping on the atomic and electronic structures in Al₂O₃ Σ7 grain boundaries

*楊 楚楚¹、馮 斌¹、魏 家科^1,2、栃木 栄太^1,3、石原 佐季¹、柴田 直哉^1,4、幾原 雄一^1,2,4 (1. 東大、2. 京大、3. PRESTO、4. JFCC)

キーワード：Alumina、Grain boundary、Segregation、STEM

In this study, the atomic and electronic band structures for two Al₂O₃ model GBs (Σ7{4-510 } and Σ7{2-310}) doped with Ti were characterized by using atom-resolved STEM, EDS and EELS.