日本金属学会 2020年春期(第166回)講演大会

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Poster Session

2.Materials Physics » Materials Physics

[P] 2.物性

Tue. Mar 17, 2020 3:00 PM - 5:00 PM Poster Session (Centennial Hall)

[P107] Effect of Bi flux on the molecular beam epitaxial growth of GaAsBi nanowires

*MORI Shota1, Tsutsumi Rikuo1, Yukimune Mitsuki1, Ishikawa Fumitaro2 (1. Ehime University Engineering (graduate student), 2. Ehime University Engineering)

Keywords:半導体、ナノワイヤ、GaAsBi

GaAs/GaAsBiナノワイヤを作成し、GaAsBiシェル成長時のBiのフラックスを変化させた3種の試料を作製し，その特性について調べた．

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