[P] 2.物性

[P107] Effect of Bi flux on the molecular beam epitaxial growth of GaAsBi nanowires

*MORI Shota¹, Tsutsumi Rikuo¹, Yukimune Mitsuki¹, Ishikawa Fumitaro² (1. Ehime University Engineering (graduate student), 2. Ehime University Engineering)

Keywords:半導体、ナノワイヤ、GaAsBi

GaAs/GaAsBiナノワイヤを作成し、GaAsBiシェル成長時のBiのフラックスを変化させた3種の試料を作製し，その特性について調べた．