[G] Thermoelectric Materials

[234] 0

*Tien　Quang NGUYEN¹, Ngoc　Nam HO¹, Katsuhiro SUZUKI¹, Hikari SHINYA², Akira MASAGO¹, Tetsuya FUKUSHIMA³, Kazunori SATO¹ (1. Osaka University、2. Tohoku University、3. The University of Tokyo)

Keywords:Silicon-Germanium、Seebeck Coefficient、Metal Doping、First-principles calculation、Boltzmann transport

We will present new findings on the improvement of the Seebeck Coefficient of SiGe Alloy due to metal doping and the underlying mechanism by using first-principles calculation.