[S6] S6.Multi-scale analysis of elementary processes in plasticity (V)(2)

[S6.6] Analysis of defects in next-generation semiconductor wafers for power device applications by polarized light observation

*Shunta HARADA¹, Yasutaka MATSUBARA¹, Kenta MURAYAMA² (1. Nagoya Univ., 2. Mipox)

Keywords:偏光観察、パワー半導体、結晶欠陥、SiC

偏光観察による次世代パワーデバイス半導体基板の欠陥解析について解説する