Contact Resistance Change Memory Based on New Operating Principle

Presentation information

一般講演

9.Electric/Electronic/Optical Materials » Electric/Electronic/Optical Materials

Fri. Sep 23, 2022 12:30 PM - 4:30 PM Rm. G (D31,3Flr. Build.D)

Chair:Yuta Saito

2:15 PM - 2:30 PM

*Yi SHUANG¹, Yuji Sutou^1,2 (1. Tohoku Univ. (AIMR), 2. Tohoku Univ.)

Keywords:phase change memory、contact resistance、memory operation

A new operating principle: contact resistance change memory using nitrogen-doped Cr₂Ge₂Te₆ (NCrGT) has been proposed in this study.

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