[G] 電気・電子・光関連材料

[121] 接触抵抗変化メモリの動作性能

*双 逸¹、須藤 祐司^1,2 (1. 東北大AIMR、2. 東北大工)

キーワード：phase change memory、contact resistance、memory operation

A new operating principle: contact resistance change memory using nitrogen-doped Cr₂Ge₂Te₆ (NCrGT) has been proposed in this study.