[G] Melting and solidification process/High temperature process

[366] Understanding the Grain Boundary Development of Silicon during Directional Solidification: Phase-Field Simulation

*Zhu Chuanqi¹, Yuichiro Koizumi², Chunwen Guo³ (1. Graduate School of Engineering, Osaka University, 2. Division of Materials and Manufacturing Science, Osaka University, 3. School of Materials and Engineering, Zhengzhou University)

Keywords:Multi-crystalline silicon、Grain boundary direction、Grain groove、Phase-field simulation

The competition relationship between attachment kinetic coefficient and interface energy during the development of silicon grain boundary has been revealed using the phase-field method