15:30 〜 15:45
[372] Small-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon
キーワード:Grain boundary、Dislocation、Multicrystalline Si、Directional solidification
With in situ observation and subsequent analyses, small-angle grain boundaries are found being able to generate dislocations by splitting and absorb these linear defects by increasing misorientation.
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