[G] 溶融・凝固プロセス 高温プロセス

[373] Grain boundary interaction in directional solidification of multi-crystalline silicon

*楊 凡¹、荘 履中¹、前田 健作¹、野澤 純¹、森戸 春彦¹、藤原 航三¹ (1. 東北大金研)

キーワード：crystal growth、grain boundary、solid/melt interface、in situ observation

The behavior of SAGBs were observed by in situ observation and EBSD method in mc-Si, which was different depending on their misorientation angle and the type of GBs plane they impinged with.