[G] 半導体・テラヘルツ光

[220] Electrical properties study of Si-doped GeTe

*姜 信英¹、金 美賢¹、逸 双^1,2、安藤 大輔¹、須藤 祐司¹ (1. 東北大工、2. 東北大学材料科学高等研究所)

キーワード：Phase change materials、GeTe、In-memory computing

In this study, we found that Si-doped GeTe affects the crystalline structure of GeTe during crystallization and that resistance decreases gradually with temperature.