[G] Electronic Materials/Terahertz Light

[244] The impact of Mn doping on the resistance and structure change behavior of RuTe₂

*SHIH　YUAN LI¹, Yi Shuang², Daisuke Ando¹, Yuji Sutou^1,2 (1. 東北大工、2. 東北大AIMR)

Keywords:phase change material、chalcogenides、PCRAM

The Mn-doped RuTe₂ thin films were deposited by using radio frequency magnetron sputtering method. The films were annealed at different temperatures and their physical properties were measured.