Session information

Oral presentation

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

[16a-A8-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

Mon. Sep 16, 2013 9:15 AM - 12:00 PM A8 (TC1 2F-232)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [16a-A8-1] Electrochemical Preparation of nano-pillar-ZnO/ Cu₂O solar cell

^○Toshiaki Takahashi¹, Takayuki Ohta¹, Misaki Kondo¹, Tsutomu Shinagawa², Thierry Pauporté³, Masanobu Izaki¹ (Toyohashi Univ.¹, Osaka Inst.², CNRS³)

9:30 AM - 9:45 AM

△ [16a-A8-2] Cu(In,Ga)Se₂ solar cells prepared by the Zn(O,S) buffer layer

^○Tetsuhito Okamoto¹, Hironori Komaki², Jyunji Sasano¹, Shigeru Niki², Masanobu Izaki¹ (Toyohashi Univ of Tech¹, Inst. of Adv. Industrial Science & Tech²)

9:45 AM - 10:00 AM

[16a-A8-3] Photovoltaic properties of ZnO/c-Se heterojunction photodiode device

^○Shigeyuki Imura¹, Kenji Kikuchi¹, Kazunori Miyakawa¹, Misao Kubota¹, Hiroshi Ootake¹ (NHK STRL¹)

10:00 AM - 10:15 AM

[16a-A8-4] Characteristics of a triangular barrier photodiode with quantum dot structures

^○Sho Nakamura¹, Masato Ohmori¹, Pavel Vitushinskiy¹, Hiroyuki Sakaki¹ (Toyota Technological Inst.¹)

10:15 AM - 10:30 AM

[16a-A8-5] GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate

^○Kazuaki Maekita¹, Takeo Maruyama¹, Koichi Iiyama¹, Toshikazu Suzuki² (Kanazawa Univ.¹, JAIST²)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[16a-A8-6] Simultaneous formation of spot-size converters and photodiode waveguides to 90° hybrid for compact coherent receiver by selective regrowth

^○Naoko Inoue¹, Hideki Yagi¹, Ryuji Masuyama¹, Takehiko Kituchi¹, Yutaka Onishi¹, Tomokazu Katsuyama¹, Masahiro Yoneda¹ (SEI, LTD¹)

11:00 AM - 11:15 AM

[16a-A8-7] Wavelength dependence of Nonlinear Response for Photodiodes II

^○Minoru Tanabe¹, Kuniaki Amemiya¹, Takayuki Numata¹, Daiji Fukuda¹, Tatsuya Zama¹ (NMIJ AIST¹)

11:15 AM - 11:30 AM

[16a-A8-8] Detection Wavelength Control of Quantum Dot Infrared Photodetectors Containing High Density InGaAs Quantum Dots

^○Sota Kagami^1,2, Yuichi Igarashi^1,2, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corporation¹, NanoQuine², IIS the Univ. of Tokyo³)

11:30 AM - 11:45 AM

[16a-A8-9] Improved specific detectivity of a quantum dot infrared photodetector by Si-doping

^○Yuichi Igarashi^1,2, Souta Kagami^1,2, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corporation¹, NanoQuine², IIS the Univ. of Tokyo³)