[16p-A8-1~14] 5.1 Semiconductor laser, Light emitter / Photodetector

Mon. Sep 16, 2013 1:30 PM - 5:15 PM A8 (TC1 2F-232)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:30 PM)

1:30 PM - 1:45 PM

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB₂O₄ crystals

^○Yuta Sasaki¹, Katsuhiko Miyamoto¹, Takashige Omatsu^1,2 (Chiba Univ.¹, JST-CREST²)

1:45 PM - 2:00 PM

▼ [16p-A8-2] Hybrid LED Developed by Si-Quantum-Dot/Polymer with Blue Emission: High Current Density and Optical Power Density

^○Yunzi Xin¹, Kazuyuki Nishio¹, Ken-ichi Saitow^1,2 (Graduate school of science, Hiroshima Univ.¹, N-BARD, Hiroshima Univ.²)

2:00 PM - 2:15 PM

[16p-A8-3] MBE growth of AlGaAs/AlAs type II quantum wells and quantum effect of AlAs layer

^○Takatoshi Nomura¹, Taisuke Jinno¹, Yuki Tani¹, Tadashi Fukuzawa², Syo Shirakata¹, Hisao Kondoh¹, Satoshi Shimomura¹ (Ehime Univ¹, JST²)

2:15 PM - 2:30 PM

[16p-A8-4] Indium Composition dependence of the surface corrugation of InGaAsQWR grown on (775) B InP substrates by MBE

^○Shun Morisada¹ (Ehime Univ¹)

2:30 PM - 2:45 PM

[16p-A8-5] Fabrication of AlGaAs distributed Bragg reflector for (775)B QWR VCSELs with sinusoidal compositional structure.

^○Naoki Manabe¹, Satoshi Shimomura¹ (Ehime Univ.¹)

2:45 PM - 3:00 PM

[16p-A8-6] Modulation Bandwidth Enhancement of Laterally-coupled Cavity VCSELs for Radio over Fiber Applications

^oHamed Dalir¹, Akihiro Matsutani¹, Fumio Koyama¹ (Precision & Intelligence Lab., Tokyo Institute of Technology¹)

3:00 PM - 3:15 PM

[16p-A8-7] Wavelength tuning characteristics of athermal VCSELs with thermally actuated MEMS structure II

^○Masanori Nakahama¹, Hayato Sano¹, Takahiro Sakaguchi¹, Akihiro Matsutani², Fumio Koyama¹ (P&I Lab.¹, Semiconductor and MEMS Processing Center²)

Break (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[16p-A8-8] Low-Threshold, Kink-Free Oscillation in an Asymmetric Ridge-Type Semiconductor Laser with Partial Single Insulating Antiguiding Layer

^○(M1)Mitsunori Oshima¹, Takahiro Numai¹ (Grad.School of Ritsumeikan Univ.¹)

3:45 PM - 4:00 PM

[16p-A8-9] Relationship between Laser Characteristics and the Order of Diffraction Gratings in the Ridge-Type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis

^○(M1)Takuya Hirasaki¹, Takahiro Numai¹ (Grad.School of Ritsumeikan Univ.¹)

4:00 PM - 4:15 PM

[16p-A8-10] Semiconductor optical amplifier using highly stacked InAs quantum dot with strain compensation technique

^○Kouichi Akahane¹, Naokatsu Yamamoto¹, Toshimasa Umezawa¹, Atsushi Kanno¹, Guo Wei Lu¹, Tetsuya Kawanishi¹ (NICT¹)

4:15 PM - 4:30 PM

[16p-A8-11] Effect of SCH/Barrier Layer Thickness on High-speed Modulation in Quantum Dot Lasers

^○Nami Yasuoka¹, Mitsuru Ishida³, Masaomi Yamaguchi³, Mitsuru Ekawa³, Tsuyoshi Yamamoto³, Kenichi Nishi¹, Misturu Sugawara⁴, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo², Fujitsu Laboratories Ltd³, QD Laser, Inc⁴)

4:30 PM - 4:45 PM

[16p-A8-12] High-Temperature Operation (100 ^oC) of InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding

^○Katsuaki Tanabe¹, Timothy Rae², Katsuyuki Watanabe¹, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. Tokyo¹, IIS, Univ. Tokyo²)

4:45 PM - 5:00 PM

[16p-A8-13] High output power operation of a LEAP laser

^○Tomonari Sato^1,3, Koji Takeda^1,3, Akihiko Shinya^2,3, Eiichi Kuramochi^2,3, Masaya Notomi^2,3, Koichi Hasebe^1,3, Takaaki Kakitsuka^1,3, Shinji Matsuo^1,3 (NTT Photonics Labs.¹, NTT Basic Research Labs.², NTT NPC³)

5:00 PM - 5:15 PM

[16p-A8-14] Development of mid-infrared LED

^○AKIMASA TANAKA¹, ASUKA MISHIMA¹, DAISUKE IIDA¹, TAKAYUKI YOSHIDA¹ (HAMAMATSU¹)

Session information

[16p-A8-1~14] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB2O4 crystals

▼ [16p-A8-2] Hybrid LED Developed by Si-Quantum-Dot/Polymer with Blue Emission: High Current Density and Optical Power Density

△ [16p-A8-1] Ultraviolet optical vortex generation with a pair of inverted β-BaB₂O₄ crystals