Session information

Oral presentation

15. Crystal Engineering » 15.8 Crystal evaluation, nanoimpurities and crystal defects

[16p-B2-1~14] 15.8 Crystal evaluation, nanoimpurities and crystal defects

Mon. Sep 16, 2013 1:30 PM - 5:15 PM B2 (TC2 1F-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[16p-B2-1] Generation of vacancies on growth interface and of interstitials inside crystal during silicon melt growth [1] By heating melt

^○Takao Abe¹, Toru Takahashi¹, Kooun Shirai² (Shin-Etsu Handotai¹, Osaka Univ.²)

1:45 PM - 2:00 PM

[16p-B2-2] Generation of vacancies on growth interface and of interstitials inside crystal during silicon melt growth [2] by gradually degreasing pulling rate

^○Takao Abe¹, Toru Takahashi¹, Koun Shirai² (Shin-Etsu Handotai¹, Osaka Univ.²)

2:00 PM - 2:15 PM

[16p-B2-3] Effect of interstitial impurities on point defect concentration in growing single crystal Si

^○Koji Sueoka¹, Eiji Kamiyama¹ (Okayama Pref. Univ.¹)

2:15 PM - 2:30 PM

[16p-B2-4] Vacancies Evaluation of CZ silicon crystal by low temperature ultrasonic measurement and secondary defect measurement (1): Correlation of void defects and the softening

^○Hiroyuki Saito¹, Kazuki Okabe^1,4, Kazuhiko Kashima¹, Hiroshi Kaneta^2,4, Yoshihiko Saito³, Yuichi Nemoto⁴, Terutaka Goto⁴ (GWJ¹, Kyushu Inst. of Tech.², Toshiba³, Niigata Univ.⁴)

2:30 PM - 2:45 PM

[16p-B2-5] Vacancies Evaluation of CZ silicon crystal by low temperature ultrasonic measurement and secondary defect measurement (2): Correlation of vacancy and BMD density.

^○kazuki Okabe^1,2, Hiroyuki Saito², Kazuhiko Kashima², Hiroshi Kaneta^1,3, Yoshihiko Saito⁴, Yuichi Nemoto¹, Terutaka Goto¹ (Niigata Univ.¹, GWJ², Kyushu Inst. of Tech.³, Toshiba⁴)

2:45 PM - 3:00 PM

[16p-B2-6] Vacancies Evaluation of CZ silicon crystal by low temperature ultrasonic measurement and secondary defect measurement (3): Sum rule for vacancy concentrations and hidden BMD

^○Hiroshi Kaneta^1,2, Hiroyuki Saito³, Kazuki Okabe^2,3, Kazuhiko Kashima³, Yoshihiko Saito⁴, Yuichi Nemoto², Terutaka Goto² (Kyushu Inst. of Technology¹, Niigata University², Global Wafers Japan Co., Ltd.³, Toshiba Corp.⁴)

3:00 PM - 3:15 PM

[16p-B2-7] Room-temperature infrared absorption at 1206 cm-1 by substitutional carbon in crystalline silicon and anharmonic local vibration

^○Hiroshi Kaneta¹, Haruhiko Ono² (Kyushu Inst. of Technology¹, Kanagawa Industrial Technology Cent.²)

Break (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[16p-B2-8] Photoluminescence Analysis of Carbon Impurity in Si Epitaxial Wafers for Power Device

^○Satoko Nakagawa¹, Kazuhiko Kashima¹ (GWJ¹)

3:45 PM - 4:00 PM

[16p-B2-9] Iron impurities and defect structures in silicon single crystal observed by Mössbauer spectroscopy

^○Yuji Ino¹, Kiyotaka Tanaka¹, Yutaka Yoshida¹ (Shizuoka Inst. Sci & Tech.¹)

4:00 PM - 4:15 PM

[16p-B2-10] Energy levels of copper centers in the band-gap of silicon

^○Minoru Nakamura¹, Susumu Murakami², Haruhiko Udono¹ (Ibaraki University¹, Hitachi Res. Lab. Hitachi, Ltd.²)

4:15 PM - 4:30 PM

[16p-B2-11] Studies of stepped reverse current-voltage characteristics of pn junction diodes (2)

^○Susumu Murakami¹, Shigeru Kokunai², Satsuki Kobayashi², Satoshi Matsuyoshi³, Takeshi Terakawa³, Shin-ichi Kurita³, Minoru Nakamura⁴ (Hitachi,Ltd., HItachi Res. Lab.¹, Hitachi Haramachi Electronics Co. Ltd.², Hitachi, Ltd., Power & Indust. Sys. Div.³, Ibaraki Univ.⁴)