[16p-D3-1~13] 6.3 Oxide-based electronics

Mon. Sep 16, 2013 2:30 PM - 6:00 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:30 PM - 2:45 PM

[16p-D3-1] Epitaxial growth and physical properties of LaVO_xN_y thin films

^○Masahito Sano^1,3, Yasushi Hirose^1,2,3, Shoichiro Nakao^2,3, Chang Yang^1,2,3, Souhei Okazaki^2,3, Tomoteru Fukumura^1,2,3, Satoshi Ishii⁴, Kimikazu Sasa⁴, Daiichiro Sekiba⁴, Katsuyuki Fukutani⁵, Tetsuya Hasegawa^1,2,3 (Tokyo Univ.¹, JST-CREST², KAST³, Tsukuba Univ.⁴, Tokyo Univ.⁵)

2:45 PM - 3:00 PM

[16p-D3-2] Fabrication of 100 nm Width VO₂ Nanowires by Phase-Selective Etching

^○Takeaki Yajima¹, Yuma Ninomiya¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

3:00 PM - 3:15 PM

[16p-D3-3] Low-temperature growth of VO₂ thin films and substrate incident ion energy analysis in ICP-assisted sputtering method

^○Suruz Md.¹, Hanis Nurul¹, Kunio Okimura¹ (Tokai Univ.¹)

3:15 PM - 3:30 PM

[16p-D3-4] Modulation of conductive property in VO₂ nano-wires due to an air gap-mediated electric field

^○(M1)Tsubasa Sasaki¹, Hiroki Ueda¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

3:30 PM - 3:45 PM

[16p-D3-5] Electrical properties of VO₂ thin films deposited by reactive sputtering and the conductive type inversion caused by post-annealing

^○BintiAzhan NurulHanis¹, Kunio Okimura¹ (Tokai Univ.¹)

3:45 PM - 4:00 PM

[16p-D3-6] Preparation of Fe₃O₄ thin films on thermally oxidized Si substrates by rapid thermal processing deoxidation method and their electrical- and magneto-conductive properties

^○Kazu Makino¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tomoyuki Horie³, Tetsuo Shimizu³ (Konan Univ.¹, Osaka Univ.², AIST³)

4:00 PM - 4:15 PM

[16p-D3-7] The revealed MIT property of a single electric domain in the one-dimensional (La,Pr,Ca)MnO₃ nanowire structure

^○Azusa Hattori¹, Yasushi Fujiwara¹, T. V. Anh Ngyuen¹, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

Break (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

[16p-D3-8] Study on resistance switching of WOx prepared by reactive sputtering at the room temperature

^○Akitoshi Nakane¹, Keisuke Takamizawa¹, Takahiro Hiroi¹, Masashi Arita¹, Yasuo Takahashi¹, Tohru Yamada¹ (IST, Hokkaido Univ.¹)

4:45 PM - 5:00 PM

[16p-D3-9] Improvement of switching characteristics in MoO_x-ReRAM

^○(M1)Takahiro Hiroi¹, Akitoshi Nakane¹, Thana Sriviriyakul¹, Keisuke Takamizawa¹, Masashi Arita¹, Yasuo Takahashi¹ (IST, Hokkaido Univ.¹)

5:00 PM - 5:15 PM

[16p-D3-10] Observation and Analysis of MoOx ReRAMs with Cu Top Electrodes

^○Masaki Kudo¹, Yuuki Ohno¹, Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (Graduate School of IST, Hokkaido Univ.¹)

5:15 PM - 5:30 PM

[16p-D3-11] Electric-field-induced resistive switching in charge-ordered YbFe₂O₄ thin films

^○Tatsuya Hori¹, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

5:30 PM - 5:45 PM

[16p-D3-12] Development of Selector Cell for 3D Cross-point ReRAM Prepared by Sputtering

^○Natsuki Fukuda¹, Kazunori Fukuju¹, Mitsutaka Hirose¹, Isao Kimura¹, Yutaka Nishioka¹, Koukou Suu¹ (ULVAC, Inc.¹)

5:45 PM - 6:00 PM

[16p-D3-13] Epitaxial CeO2 Thin Films as a ReRAM Candidate

^○Michiko Yoshitake¹, Michal Vaclavu^1,2, Mykhailo Chundak^1,2, Vladimir Matolin², Toyohiro Chikyow¹ (National Inst. Materials Sci.¹, Charles Univ. in Prague²)

Session information

[16p-D3-1~13] 6.3 Oxide-based electronics