Session information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-B3-1~17] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 1:30 PM - 6:00 PM B3 (TC2 1F-105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:30 PM)

1:30 PM - 1:45 PM

[17p-B3-1] [JSAP Young Scientist Award Speech](15 min.) Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

^○Yong-Zhao Yao¹ (JFCC¹)

1:45 PM - 2:00 PM

[17p-B3-2] Discussion for Mechanism of Single Event Gate Rupture in SiC-MOS Capacitors

^○(DC)Manato Deki^1,2, Takahiro Makino², Takuro Tomita¹, Kazutoshi Kojima³, Takeshi Ohshima² (Tokushima Univ.¹, JAEA², AIST³)

2:00 PM - 2:15 PM

[17p-B3-3] Development of a FCA measurement system for evaluation of carrier lifetime in SiC

^○Yuto Mori¹, Truyen Nhuyen¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

2:15 PM - 2:30 PM

[17p-B3-4] Aluminum Doping of 4H-SiC by wet-chemical Laser Irradiation with KrF Excimer Laer

^○Daichi Marui¹, Akihiro Ikeda¹, Koji Nishi¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

2:30 PM - 2:45 PM

△ [17p-B3-5] Development of Real-Time Gamma-Ray Dose Rate Dosimeter with 4H-SiC

^○(PC)Natsuko Fujita¹, Naoya Iwamoto¹, Shinobu Onoda¹, Takahiro Makino¹, Takeshi Ohshima¹ (JAEA¹)

2:45 PM - 3:00 PM

△ [17p-B3-6] Defects in HPSI 4H-SiC studied by alpha particles induced charge transient spectroscopy

^○(PC)Naoya Iwamoto¹, Natsuko Fujita¹, Takahiro Makino¹, Shinobu Onoda¹, Takeshi Ohshima¹ (JAEA¹)

3:00 PM - 3:15 PM

[17p-B3-7] Identification of defect structures forming the deep levels in 4H-SiC using electron irradiation technique

^○Masashi Kato¹, Hiroki Nakane¹, Masaya Ichimura¹, takeshi Ohshima² (Nagoya Institute of Technology¹, Japan Atomic Energy Agency²)

3:15 PM - 3:30 PM

[17p-B3-8] Room Temperature Process for Producing Silicon Carbide Thin Film on Metal Surface

Masaki Tsuji¹, Azumi Hirooka¹, ^○Hitoshi Habuka¹ (Yokohama Nat. Univ.¹)

Break (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[17p-B3-9] Off-Orientation Influence on C-face (0001) 4H-SiC Surface Morphology Produced by Etching using

Yusuke Fukumoto¹, ^○Hitoshi Habuka¹, Tomohisa Kato² (Yokohama Nat. Univ.¹, AIST²)

4:00 PM - 4:15 PM

[17p-B3-10] SiC Epitaxial Reactor Cleaning Method Using Chlorine Trifluoride Gas

Yusuke Fukumoto¹, ^○Kosuke Mizuno¹, Hitoshi Habuka¹, Yuki Ishida², Toshiyuki Ohno² (Yokohama Nat. Univ.¹, FUPET²)

4:15 PM - 4:30 PM

[17p-B3-11] Production Method of ClF3 Resistant Film

^○Hitomi Matsuda¹, Hitoshi Habuka¹, Yuki Ishida², Toshiyuki Ohno² (Yokohama Nat. Univ.¹, FUPET²)

4:30 PM - 4:45 PM

[17p-B3-12] Development of Silicon Carbide Etching Reactor Using Chlorine Trifluoride Gas (2)

^○Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (Yokohama Nat. Univ.¹, AIST²)

4:45 PM - 5:00 PM

[17p-B3-13] The debunching mechanism of macro-step bunching on 4H-SiC(0001) surface

^○(M1)Hideki Shimizu¹, Yasunori Kutsuma¹, Kouji Ashida¹, Noboru Ohtani¹, Tadaaki Kaneko¹ (Kwansei Gakuin Univ.¹)

5:00 PM - 5:15 PM

△ [17p-B3-14] Breakdown Characteristics in Surface-Activated Bonding Based Si/SiC Junctions

^○(M1)Shota Nishida¹, Jianbo Liang¹, Masasi Morimoto¹, Naoteru Shigekawa¹, Manabu Arai² (Osaka City Univ.¹, New Japan Radio Co., Ltd.²)

5:15 PM - 5:30 PM

△ [17p-B3-15] Conversion from basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with vicinal off-angle

^○Keiko Masumoto^1,2, Sachiko Ito^1,2, Hideto Goto², Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

5:30 PM - 5:45 PM

△ [17p-B3-16] 3C-SiC Film Growth on Si Substrates by Pulsed Laser Deposition

^○Tsugitada Narita¹, Kazuki Meguro¹, Daiki Suzuki¹, Yohei Yamamoto¹, Kaonn Noto¹, Hideki Nakazawa¹ (Hirosaki Univ.¹)

5:45 PM - 6:00 PM

[17p-B3-17] Cross-sectional TEM Observation of Epitaxial Graphene formed on Rotated-Epi-Film of 3C-SiC(111) on Si(110) Substrates

^○(M2)Shota Sambonsuge¹, Hirouiki Nagasawa¹, Sergey Filimonov², Shun Ito³, Hirokazu Fukidome¹, Maki Suemitsu^1,4 (RIEC, Tohoku Univ.¹, Dept. of Physics, Tomsk State Univ.², IMR, Tohoku Univ.³, JST/CREST⁴)

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