Session information

Poster presentation

15. Crystal Engineering » 15.1 Bulk crystal growth

[17p-P6-1~3] 15.1 Bulk crystal growth

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P6 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[17p-P6-1] MCZ Silicon Crystal Growth with Ultra Low Carbon Concentration

^○Yuta Nagai¹, Satoko Nakagawa¹, Kazuhiko Kashima¹ (GWJ¹)

1:30 PM - 3:30 PM

[17p-P6-2] Growth and scintillation properties of ternary eutectic fluoride

^○(DC)Akihiro Yamaji¹, Shunsuke Kurosawa^{1, 2}, Kousuke Hishinuma¹, Yoshisuke Futami³, Pejchal Jan¹, Kei Kamada², Yuui Yokota², Akira Yoshikawa^1,2 (Tohoku Univ. IMR¹, Tohoku Univ. NICHe², Kumamoto Tech. col.³)

1:30 PM - 3:30 PM

[17p-P6-3] Examination of polycrystal synthesis conditions for the growth of large and high quality AgGaSe₂ single crystals

^○Masami Susaki¹ (OPUCT¹)

▲

Session information

[17p-P6-1~3] 15.1 Bulk crystal growth

[17p-P6-1] MCZ Silicon Crystal Growth with Ultra Low Carbon Concentration

[17p-P6-2] Growth and scintillation properties of ternary eutectic fluoride

[17p-P6-3] Examination of polycrystal synthesis conditions for the growth of large and high quality AgGaSe2 single crystals

[17p-P6-3] Examination of polycrystal synthesis conditions for the growth of large and high quality AgGaSe₂ single crystals