[18a-B3-1~9] 15.6 IV-group-based compounds

Wed. Sep 18, 2013 9:00 AM - 11:30 AM B3 (TC2 1F-105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-B3-1] The suppression of the trenches by the control of solution flow above growth surface in the solution growth of SiC

^○Can Zhu¹, Shunta Harada¹, Kazuaki Seki¹, Shiyu Xiao¹, Miho Tagawa¹, Yuji Matsumoto², Tomohisa Kato^3,4, Kazuhisa Kurashige^4,5, Hajime Okumura^3,4, Toru Ujihara¹ (Nagoya Univ.¹, Tohoku Univ.², AIST³, FUPET⁴, Hitachi Chemical⁵)

9:15 AM - 9:30 AM

[18a-B3-2] Threading dislocation conversion and step structure during SiC solution growth

^○Shunta Harada¹, Yuji Yamamoto¹, Shiyu Xiao¹, Atsushi Horio¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

9:30 AM - 9:45 AM

▼ [18a-B3-3] Investigation of basal plane dislocations generated during solution growth of silicon carbide

^○Shiyu Xiao¹, Can Zhu¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya Univ.¹)

9:45 AM - 10:00 AM

△ [18a-B3-4] Effects of an Al additive in Si-Ni flux on the flux growth of SiC

^○Aomi Onuma¹, Shingo Maruyama¹, Shunta Harada², Toru Ujihara², Tomohisa Kato^3,4, Kazuhisa Kurashige^4,5, Hajime Okumura^3,4, Yuji Matsumoto^1,6 (MSL, Tokyo Tech¹, Nagoya Univ.², AIST³, FUPET⁴, Hitachi Chemical⁵, Tohoku Univ.⁶)

10:00 AM - 10:15 AM

[18a-B3-5] Raman investigation for subsurface damage induced by scratching test using diamond and SiC scratchers

Takeshi Mitani^1,2, ^○Masaru Tomobe², Shin-ichi Nakashima², Tomohisa Kato^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[18a-B3-6] [Young Scientist Oral Presentation Award Speech](15 min.) Real-time Observation of Solution Growth Interface of SiC at High Temperature Using Visible Light Transmission Observation

^○Sakiko Kawanishi¹, Takeshi Yoshikawa¹, Kazuki Morita¹, Kazuhito Kamei², Kazuhiko Kusunoki², Hidemitsu Sakamoto³, Hiroshi Suzuki³ (The Univ. of Tokyo¹, Nippon Steel & Sumitomo Metal Corp.², Toyota Motor Corp.³)

10:45 AM - 11:00 AM

▲ [18a-B3-7] Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth

^○Bing Gao¹, Shin-ichi Nishizawa², Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹, AIST²)

11:00 AM - 11:15 AM

[18a-B3-8] Non destructive inspection of dislocations in SiC wafer by mirror projection electron microscopy

^○Toshiyuki Isshiki¹, Masaki Hasegawa² (Kyoto Inst. Tech.¹, Hitachi, Cent. Res. Lab.²)

11:15 AM - 11:30 AM

[18a-B3-9] 3C-SiC(1-10) and 4H-SiC(11-20) surface electronic states and their stability

^○(PC)Hiroshi Koyama^1,2, Jun Nara^1,2, Takahisa Ohno^1,2,3 (NIMS¹, MARCEED², IIS U.Tokyo³)