[18p-B4-1~12] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Sep 18, 2013 1:30 PM - 4:45 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch (12:00 PM - 1:30 PM)

1:30 PM - 1:45 PM

△ [18p-B4-1] Temperature dependence of growth rate on (311) facet in Ge selective growth with CVD

^○Yasutaka Mizuno¹, Naoyuki Kawai¹, Kazumi Wada¹ (Univ. of Tokyo¹)

1:45 PM - 2:00 PM

[18p-B4-2] Crystallinity evaluation of Ge crystal for optical waveguides by highly parallel synchrotron X-ray microbeam

^○Takahiro Onoue¹, Kazuki Hazama¹, Shuhei Fukuda¹, Yoshiyuki Tsusaka^1,2, Hidekazu Takano^1,2, Yasushi Kagoshima^1,2, Yasutaka Mizuno³, Yasuhiko Ishikawa³, Kazumi Wada³, Junji Matsui² (Univ. of Hyogo¹, Univ. of Hyogo², Tokyo Univ.³)

2:00 PM - 2:15 PM

[18p-B4-3] RBS measurement of Ge directly grown on Si substrate(II)

^○Kenichiro Kono¹, Sungbong Park², Yasuhiko Ishikawa², Kazumi Wada² (NIMS, Quantum Beam U.¹, Univ. of Tokyo, Mat. Eng.²)

2:15 PM - 2:30 PM

[18p-B4-4] Low temperature crystallization of amorphous SiGe layer by Sn incorporation

^○Takashi Yamaha¹, Takamitsu Arahira¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya University¹, SPS²)

2:30 PM - 2:45 PM

[18p-B4-5] Supersaturation controlled crystallization of large-grain poly-Si_1-xSn_x on insulator

^○Masashi Kurosawa^1,2, Takamitsu Arahira¹, Takashi Yamaha¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS²)

2:45 PM - 3:00 PM

[18p-B4-6] Characterization of Ge_1-x-ySn_xC_y Layers Formed by useing Sputtering Deposition

^○Kengo Terasawa¹, Tomonori Harada¹, Takashi Yamaha¹, Osamu Nakatsuka¹, Noriyuki Taoka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[18p-B4-7] Optical Properties of High Sn Content Ge_1-xSn_x Epitaxial Layers

^○Koya Hozaki¹, Takeshi Koyama¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Hideo Kishida¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow (PD)²)

3:30 PM - 3:45 PM

[18p-B4-8] Electrical Properties of Ge_1-xSn_x Epitaxial Layers Grown on GOI substrates

^○Takuma Ohmura¹, Takanori Asano¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate school of Eng.,Nagoya Univ.¹, JSPS Research Fellow (PD)²)

3:45 PM - 4:00 PM

[18p-B4-9] Characterization of anisotropic strain Ge-rich SGOI nanowire formed by two-step Ge-condensation technique with high-NA and oil-immersion Raman spectroscopy

^○Koji Usuda¹, Keiji Ikeda¹, Daisuke Kosemura², Motohiro Tomita², Atsushi Ogura², Tsutomu Tezuka¹ (AIST-GNC¹, Meiji Univ.²)

4:00 PM - 4:15 PM

△ [18p-B4-10] Deposition of crystalline Ge nanoparticle films by RF sputtering method

^○(M1)Daiki Ichida¹, Giichiro Uchida¹, Hyunwoong Seo¹, Kunihiro Kamataki³, Naho Itagaki^1,2, Kazunori Koga¹, Masaharu Shiratani¹ (Kyushu Univ.¹, PRESTO², Faculty of Arts and Science, Kyushu Univ.³)

4:15 PM - 4:30 PM

[18p-B4-11] EXAFS study on Mn doping into Si: detection of silicide formation

^○Kazushi Miki^1,2, Koichi Murata^1,2, Kiyofumi Nitta³, Tomoya Uruga³, Yasuko Terada³, Ko'ichi Nittoh¹, Osami Sakata¹ (NIMS¹, Univ. of Tsukuba², JASRI³)

4:30 PM - 4:45 PM

▲ [18p-B4-12] Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

^○Arivanandhan Mukannan¹, Raira Gotoh², Kozo Fujiwara², Satoshi Uda², Yuko Inatomi³, Yasuhiro Hayakawa¹, Makoto Konagai⁴ (RIE Shizuoka Univ¹, IMR Tohoku Univ.², JAXA³, Tokyo Insti.Tech.⁴)