Oral presentation

09. Applied Materials Science » 9.2 Nanowires, nanoparticles

[18p-C11-1~14] 9.2 Nanowires, nanoparticles

Wed. Sep 18, 2013 1:00 PM - 4:45 PM C11 (TC3 2F-210)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (11:30 AM - 1:00 PM)

1:00 PM - 1:15 PM

△ [18p-C11-1] Impurity co-doped colloidal Si nanocrystals with near-IR to visible luminescence

^○(M2)Hiroshi Sugimoto¹, Minoru Fujii¹, kenji Imakita¹, Shinji Hayashi¹, Kensuke Akamatsu² (Kobe Univ.¹, Konan Univ.²)

1:15 PM - 1:30 PM

[18p-C11-2] Fabrication and optical properties of colloidal SiGe nanocrystals

^○Takashi Kanno¹, Hiroshi Sugimoto¹, Minoru Fujii¹, Kenji Imakita¹, Shinji Hayashi¹ (Kobe univ.¹)

1:30 PM - 1:45 PM

[18p-C11-3] Optical properties of undecylenic acid terminated Si nanocrystals dispersed in liquid solution

^○(M2)Kenji Nagata¹, Kimihisa Matsumoto¹, Takashi Nomura¹, Kazuhide Kamiya¹, Shinya Suzuki² (Toyama Prefectural Univ.¹, Nagano Nat. Col. of Tech.²)

1:45 PM - 2:00 PM

[18p-C11-4] Photoconductivity of Si nanocrystal/P3HT composite

^○Kengo Funaki¹, Nobuhiro Kondo¹, Koichi Usami¹, Tetsuo Kodera¹, Yukio Kawano¹, Tomohiro Nozaki², Shunri Oda¹ (QNERC, Tokyo Tech¹, Dept.Mech.Sci.Eng, Tokyo Tech²)

2:00 PM - 2:15 PM

[18p-C11-5] Application of dilute nitride semiconductor nanowires for photonic crystals

^○Fumitaro Ishikawa^1,2, Hiroaki Goto², Masato Morifuji² (Ehime Univ.¹, Osaka Univ.²)

2:15 PM - 2:30 PM

[18p-C11-6] Extended XYZ algorithm for deriving phonon modes in a tube structure

^○Norihiko Nishiguchi¹ (Hokkaido Univ.¹)

Break (2:30 PM - 2:45 PM)

2:45 PM - 3:00 PM

[18p-C11-7] Fabrication and Characterization of GaAs Nanowire on Poly-Si by Selective Area MOVPE (II)

Keitaro Ikejiri¹, Fumiya Ishizaka¹, Katsuhiro Tomioka^1,2, ^○Takashi Fukui¹ (GSIST,Hokkaido Univ¹, JSI-PRESTO²)

3:00 PM - 3:15 PM

[18p-C11-8] Optical property of multi-stacked InP/InAs nanowires grown in Au-free In-particle-assisted vapor-liquid-solid mode

^○Guoqiang Zhang¹, Danang Birowosuto¹, Kouta Tateno¹, Hideki Gotoh¹ (NTT BRL¹)

3:15 PM - 3:30 PM

[18p-C11-9] Improvement of optical properties of InGaAs/GaAs quantum-dots-in-nanowires by introduction of AlGaAs/GaAs core/shell structure

^○Jun Tatebayashi¹, Masao Nishioka², Yasuhiko Arakawa^1,2 (NanoQUINE, the Univ. of Tokyo¹, IIS, the Univ. of Tokyo²)

3:30 PM - 3:45 PM

△ [18p-C11-10] Fabrication of wurtzite InP/GaP core-shell nanowires by selective-area MOVPE

^○Fumiya Ishizaka¹, Keitaro Ikejiri¹, Katsuhiro Tomioka^1,2, Takashi Fukui¹ (GS-IST, RCIQE, Hokkaido Univ.¹, JST-PRESTO²)

3:45 PM - 4:00 PM

[18p-C11-11] Position-defined InP-based nanowire growth by VLS mode using template masks

^○Kenichi Kawaguchi¹, Hisao Sudo¹, Manabu Matsuda¹, Mitsuru Ekawa¹, Tsuyoshi Yamamoto¹, Yasuhiko Arakawa² (Fujitsu Labs.¹, INQIE, Univ. of Tokyo²)

4:00 PM - 4:15 PM

[18p-C11-12] Characterization of GaAs Nanowires with Laterally Grown Layers

^○(M1)Toshihiro Wada¹, Yoshinori Kohashi¹, Shinjiroh Hara^1,2, Junichi Motohisa¹ (Graduate School of IST, Hokkaido Univ.¹, RCIQE, Hokkaido Univ.²)

4:15 PM - 4:30 PM

[18p-C11-13] Fabrication of Fe nanowires by Thermal CVD Method

^○(M1)Aiko Kawahito¹, Takashi Yanase², Tarou Nagahama², Toshihiro Shimada² (Hokkaido Univ.¹, Hokkaido Univ.²)

4:30 PM - 4:45 PM

△ [18p-C11-14] Vanadium Oxide Nanowire Growth on SiO₂ Nanocolumns

^○Kyoko Namura^1,2, Shu-Yi Li³, Claes G. Granqvist³, Hikaru Saito⁴, Hiroki Kurata⁴, Motofumi Suzuki¹, Kaoru Nakajima¹, Kenji Kimura¹ (Kyoto Univ.¹, J S P S Research Fellow², Uppsala Univ.³, ICR⁴)