Oral presentation

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[18p-D1-1~17] 6.2 Carbon-based thin films

Wed. Sep 18, 2013 1:00 PM - 5:45 PM D1 (MK 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

[18p-D1-1] The effect of O₂ plasma asshing after carbon layers formation at Ti/n-type diamond interface

^○(DC)Tsubasa Matsumoto^1,2,3, Kazuya Shirota^1,2,3, Hiromitsu Kato^2,3, Norio Tokuda^2,3,4, Daisuke Takeuchi^2,3, Toshiharu Makino^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^1,2,3 (University of Tsukuba¹, AIST², CREST c/o AIST³, Kanazawa University⁴)

1:15 PM - 1:30 PM

▼ [18p-D1-2] Homogeneity of WC p-type diamond Schottky interfaces

^○Alexandre Fiori¹, Tokuyuki Teraji¹, Yasuo Koide¹ (NIMS¹)

1:30 PM - 1:45 PM

△ [18p-D1-3] Enhanced dielectric strength of high-temperature annealed ALD-Al₂O₃films

^○Kazuhiro Kuruma¹, Tatsuya Saito¹, Akira Daicho¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

1:45 PM - 2:00 PM

△ [18p-D1-4] High temperature operation of hydrogen-terminated diamond MOSFETs with Al₂O₃ passivation

^○Dechen Xu¹, Hidetoshi Tsuboi¹, Tomoya Naruo¹, Tetsuya Yamada¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda University¹)

2:00 PM - 2:15 PM

△ [18p-D1-5] Breakdown characteristic of hydrogen-terminated diamond MOSFETs with Al2O3 passivation

^○Tetsuya Yamada¹, Tomoya Naruo¹, Hidetoshi Tsuboi¹, Dechen Xu¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Break (2:15 PM - 2:30 PM)

2:30 PM - 2:45 PM

[18p-D1-6] On/off ratio and temperature dependence of pulse current injection in diamond exciton LED

^○Daisuke Kuwabara^1,2,3, Toshiharu Makino^2,3, Satoshi Koizumi^3,4, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^2,3 (Univ.of Tukuba¹, ETRI,AIST², CREST/JST³, NIMS⁴)

2:45 PM - 3:00 PM

[18p-D1-7] Electron Emission from Ib Diamond with Low Extraction Voltage

^○Yuki Kudo^1,2,3,4, Daisuke Takeuchi^2,3,4, Toshiharu Makino^2,3,4, Masahiko Ogura^2,3,4, Hiromitsu Kato^2,3,4, Hideyo Okushi^2,3,4, Satoshi Yamasaki^1,2,3,4 (Univ. of Tsukuba¹, AIST², CREST(JST)³, ALCA(JST)⁴)

3:00 PM - 3:15 PM

[18p-D1-8] CEES measurements of the high concentration boron-doped diamond films

^○Shunsuke Kondou¹, Kazutoshi Fukui¹, Kohji Yamamoto², Takashi Inushima³ (Fac. of Engi., Univ. of Fukui¹, FIR Center, Univ. of Fukui², Tokai Univ³)

3:15 PM - 3:30 PM

[18p-D1-9] Hot-filament-CVD-made superconducting diamond films with higher Tc at lower carrier concentration

^○Yuji Muraoka¹, Chiaki HIramatsu¹, Takanori Wakita¹, Takayoshi Yokoya¹, Hiroshi Kumigashira², Masaharu Oshima³ (Okayama Univ.¹, KEK², The Univ. of Tokyo³)

3:30 PM - 3:45 PM

[18p-D1-10] Graphene Production by Electrolytic Exfoliation of Natural Graphite with Potassium Hydroxide

^○Sotaro Akiyama^1,2, Emi Kano^1,2, Tomohiko Igari¹, Xiuqin Chen¹, Masaki Takeguchi³, Katsuhisa Murakami^1,2, Jun-ichi Fujita^1,2 (University of Tsukuba¹, Tsukuba Research Center for Interdisciplinary Materials Science², National Institute for Materials Science³)

Break (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

△ [18p-D1-11] Formation of graphene using carbon thin film DLC and evaluation

^○(M1)Naohiro Ryu¹, Taiji Takeuchi¹, Yuriko Imanaga¹, Motoi Nakao¹, Satoko Okubayashi², Sinji Nagamachi³ (Kyusyu Inst. Tech.¹, Kyouto Inst. Tech², Nagamachi Science Laboratory Co.,Ltd.³)

4:15 PM - 4:30 PM

[18p-D1-12] Relationship between structure and photovoltaic properties in semiconducting Single-walled Carbon Nanotubes/Si heterojunction cells

^○(M1)Atsushi Nakano¹, Hironori Ogata¹, Mao Syouji¹, Jiyou Kim¹ (Hosei Univ.¹)

4:30 PM - 4:45 PM

[18p-D1-13] Fabrication of nanodiamond particles by chemical modification for MRI contrast agents

^○Takako Nakamura¹, Tsuguyori Ohana¹, Tetsuo Tsuchiya¹, Hajime Yabuno², Rumiko Kasai³, Tetsuya Suzuki², Terumitsu Hasebe⁴ (AIST¹, Keio Univ.², Toho Univ.³, Tokai Univ.⁴)

4:45 PM - 5:00 PM

[18p-D1-14] Characterization of N-doped DLC thin films prepared by the thermal decomposition method

^○Yuma Murata¹, Katsumi Tanaka¹, Ono Hiroshi¹, Cheow-Keong Choo¹, Yutaka Nagai¹ (Electro-Communications Univ.¹)

5:00 PM - 5:15 PM

△ [18p-D1-15] Fabrication of graded band-gap amorphous carbon nitride films

^○Naoyuki Tamura¹, Masami Aono¹, Tomo Harata¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

5:15 PM - 5:30 PM

△ [18p-D1-16] Dependence of Wavelength on Reversible Photo-induced Volume Changes of Amorphous Carbon Nitride Films

^○Tomo Harata¹, Masami Aono¹, Naoyuki Tamura¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

5:30 PM - 5:45 PM

[18p-D1-17] Decomposition of C₂H₂ in the microwave discharge flow of N₂ : Observation of free radicals by laser spectroscopy

^○Hiroki Tsudome¹, Haruhiko Ito¹ (Nagaoka Univ.¹)