Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18p-D7-1~5] 14.4 Optical properties and light-emitting devices

Wed. Sep 18, 2013 2:30 PM - 3:45 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (1:00 PM - 2:30 PM)

2:30 PM - 2:45 PM

[18p-D7-1] TFEL devices prepared by ink-jet printing(Ⅱ)-ZnS:Mn fine particles synthesized by hydrothermal method-

^○Naoya Fukuta¹, Naoki Doi¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC.²)

2:45 PM - 3:00 PM

△ [18p-D7-2] Ultrashort Laser Irradiation to ZnS Phosphor for Inorganic Electroluminescent Displays

^○Kyohei Nabesaka¹, Yasuaki Ishikawa^1,3, Takahiro Doe¹, Nobuyoshi Taguchi², Yoichiroh Hosokawa¹, Yukiharu Uraoka^1,3 (NAIST¹, Image Tech Inc², CREST³)

3:00 PM - 3:15 PM

[18p-D7-3] Electroluminescence properties of NaNbO₃:Pr/SnO₂:Sb and (Ca,Sr)TiO₃:Er/SnO₂:Sb alternately stacked multilayers

^○Toru Kyomen¹, Miyu Seki¹, Sayaka Hasuko¹, Minoru Hanaya¹, Hiroshi Takashima² (Gunma Univ.¹, AIST²)

3:15 PM - 3:30 PM

[18p-D7-4] Electroluminescence Property of a Powder-Type Device Based on Pr-Doped Titanate Nanocrystals Synthesized Hydrothermaly Using a Flow-Type Microreaction System

Mitsuko Aoki¹, ^○Keiichi Ikegami², Yukiya Hakuta², Hiroshi Takashima¹ (EPRI/AIST¹, NRI/AIST²)

3:30 PM - 3:45 PM

[18p-D7-5] Inorganic thin-film DC EL devices using oxide semiconductors

^○Kunitoshi Yanagihara¹, Noboru Miura¹, Hironaga Matsumoto¹ (Meiji Univ.¹)

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