^○Yuki Maeda¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

^○(M2)WuKang Kim¹, Yufei Kin¹, Younghyun Kim¹, SangHyeon Kim¹, Takenori Osada², Masahiko Hata², Mitsuru Takenka¹, Shinichi Takagi¹ (The University of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

^○Tatsuro maeda¹, Jevasuwan Wipakorn¹, Hiroyuki Hattori¹, Noriyuki Uchida¹, J. -P. Locquet², R. R. Lieten^{2, 3} (AIST¹, KU Leuven², IMEC³)

Yoshiki Kamata¹, ^○Yuuichi Kamimuta¹, Keiji Ikeda¹, Kiyoe Furuse¹, Mizuki Ono¹, Minoru Oda¹, Yoshihiko Moriyama¹, Kouji Usuda¹, Masahiro Koike¹, Toshifumi Irisawa¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (AIST GNC¹)

^○Keiji Ikeda¹, Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Mizuki Ono¹, Koji Usuda¹, Minoru Oda¹, Toshifumi Irisawa¹, Kiyoe Furuse¹, Tsutomu Tezuka¹ (AIST-GNC¹)

^○Toshifumi Irisawa¹, Minoru Oda¹, Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Keiji Ikeda¹, Eiko Mieda¹, Jevaswan Wipakorn¹, Tatsurou Maeda¹, Osamu Ichikawa², Takenori Osada², Masahiko Hata², Tsutomu Tezuka¹ (AIST-GNC¹, Sumitomo Cemical Co. Ltd²)

^○Katsuhiro Tomioka^1,2, Masatoshi Yoshimura¹, Takashi Fukui¹ (GS-IST, RCIQE, Hokkaido Univ.¹, JST-PRESTO²)

^○Chika Tanaka¹, Masumi Saitoh¹, Kensuke Ota¹, Toshinori Numata¹, Daisuke Matsushita¹ (Corporate R&D Center, Toshiba Corporation¹)

^○Shinji Naito¹, Shuichi Nakiri², Yoshina Ito², Hironobu Shiraiwa², Kiyoteru Kobayashi^1,2 (Graduate School of Engineering, Tokai Univ.¹, Tokai Univ.²)

^○Ichiro Yamakawa¹, Yoshiki Yonamoto¹ (YRL, Hitachi, Ltd.¹)

^○(M1)Kenji Hashimoto¹, Takumi Sugitani¹, Shinichi Kubota¹, Takamaro Kikkawa¹ (Hiroshima Univ. Nano device Inst.¹)

^○(M1)Mitian Wang¹, Azhari Afreen¹, kenta Sogo¹, Takamaro Kikkawa¹ (Hiroshima Univ.Nano device Inst.¹)

^○Azhari Afreen¹, Kenta Sogo¹, Mitian Wang¹, Akihiro Toya¹, Takamaro Kikkawa¹ (Hiroshima Univ.¹)