Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-B5-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 1:00 PM - 7:15 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:30 PM

[19p-B5-1] [JSAP Paper Award Speech](30 min.) Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

^○Yoshinao Kumagai¹, Yuki Kubota², Toru Nagashima^1,2, Toru Kinoshita², Rafael Dalmau³, Raoul Schlesser³, Baxter Moody³, Jinqiao Xie³, Hisashi Murakami¹, Akinori Koukitu¹, Zlatko Sitar^3,4 (TUAT¹, TOKUYAMA², HexaTech³, NC State Univ.⁴)

1:30 PM - 1:45 PM

[19p-B5-2] [Young Scientist Oral Presentation Award Speech](15 min.) Bulk GaN Single Crystal Growth on a Point Seed by the Na-Flux Method

^○Mamoru Imade¹, Kosuke Murakami¹, Daisuke Matsuo¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Yuma Todoroki¹, Akira Kitamoto¹, Mihoko Maruyama¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka University¹)

1:45 PM - 2:00 PM

[19p-B5-3] Effect of mineralizer species on crystal growth of GaN by acidic ammonothermal method

^○Quanxi Bao^1,3, Makoto Saito^1,2, Daisuke Tomida¹, Kouji Hazu¹, Kentaro Furusawa¹, Yuji Kagamitani², Rinzo Kayano³, Kun Qiao¹, Tohru Ishiguro¹, Chiaki Yokoyama¹, Shigefusa F. Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corporation², The Japan Steel Works³)

2:00 PM - 2:15 PM

[19p-B5-4] Suppression of Stacking Faults in {20-21} GaN on Patterned Sapphire Substrate

^○Yasuhiro Hashimoto¹, Masakazu Koyama¹, Takashi Inagaki¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

2:15 PM - 2:30 PM

△ [19p-B5-5] X-ray diffraction analysis of epitaxial thick AlN films grown on triangular-striped AlN/Sapphire templates

^○Takuji Arauchi¹, Shotaro Takeuchi¹, Kunihiko Nakamura¹, Khan Dhin¹, Yoshiaki Nakamura^1,2, Hideto Miyake³, Kazumasa Hiramatsu³, Akira Sakai¹ (Osaka.univ¹, PRESTO-JST², Mie.univ³)

2:30 PM - 2:45 PM

△ [19p-B5-6] High-Speed Growth of In- and N-Polar InN Layers Using Two-Step Precursor Generation Hydride Vapor Phase Epitaxy

^○Hironobu Saito¹, Naoto Fujita¹, Ryota Imai¹, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. & Tech.¹)

2:45 PM - 3:00 PM

[19p-B5-7] Formation of SiC buffer layer by carbonization of Si surface using CO gas for growth of nitrides on Si substrate

^○(PC)Momoko Deura¹, Hiroyuki Fukuyama¹ (IMRAM, Tohoku Univ.¹)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

△ [19p-B5-8] High rate growth of AlInN by MOVPE

^○Yugo Kozuka¹, Toshiki Yasuda¹, Tomoyuki Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ¹, Akasaki Research Center, Nagoya Univ²)

3:30 PM - 3:45 PM

[19p-B5-9] Growth and Characterization on InAlN/InAlN MQW

^○(M1)Tatsuya Ito¹, Arata Watanabe¹, Kentaro Mori¹, Takashi Egawa¹ (Nagoya Inst.of Tech.¹)

3:45 PM - 4:00 PM

△ [19p-B5-10] Fabrication of Semipolar (1\overline{1}02) AlGaN/AlN Quantum Wells on AlN Substrates

^○Shuhei Ichikawa¹, Mitsuru Funato¹, Shunro Nagata², Yoichi Kawakami¹ (Dept. of Electronic Sci. & Eng., Kyoto Univ.¹, JFE Mineral Co. Ltd.²)

4:00 PM - 4:15 PM

△ [19p-B5-11] Control of AlN buffer layer by annealing in N₂-CO for growth of AlN on sapphire

^○(M2)Gou Nishio¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Hiroyuki Fukuyama² (Mie Univ.¹, Tohoku Univ.²)

4:15 PM - 4:30 PM

[19p-B5-12] Side-etching characteristics of GaN hydrogen environment anisotropic thermal etching (HEATE)

^○(M2)Hiroki Hachiya¹, Akihiko Kikuchi¹ (Sophia University¹)

4:30 PM - 4:45 PM

[19p-B5-13] Correlation between Dislocations in GaN Epitaxial Layer and Wafer Dicing Process

^○Hideyuki Taguchi^1,3, Amane Kitahara¹, Shugo Miyake¹, Akimitsu Nakaue¹, Atsushi Suzuki², Satoshi Kamiyama², Yasufumi Fujiwara³ (KOBELCO RESEARCH INSTITUTE, INC.¹, Meijo Univ.², Osaka Univ.³)

4:45 PM - 5:00 PM

[19p-B5-14] Current confinement structures towards blue vertical cavity surface emitting lasers

^○(M1)Keisuke Nakajima¹, Masahiro Watanabe¹, Mitsuru Kaga¹, Tomoyuki Suzuki¹, Daichi Minamikawa¹, Tetsuya Takeuchi¹, Satatoshi Kamiayama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center, Nagoya Univ.²)

5:00 PM - 5:15 PM

[19p-B5-15] Fabrication and Evaluation of Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer

^○Kota Nakao¹, Haziq Muhammad¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. and Eng., Yamaguchi Univ.¹)

Break (5:15 PM - 5:30 PM)

5:30 PM - 5:45 PM

△ [19p-B5-16] Polarization characteristics for UV-LED with subwavelength grating inserted low refractive index inter layer

^○Yuusuke Takashima¹, Ryo Shimizu¹, Masanobu Haraguchi^1,2, Yoshiki Naoi^1,2 (ATS, The Univ.of Tokushima¹, STS, The Univ.of Tokushima²)

5:45 PM - 6:00 PM

[19p-B5-17] Improvement of Connected-Pillar AlN structure for buffer layer of Deep-UV LEDs

^○(M1)Shiro Toyoda^1,2, Katsuya Mizusawa^1,2, Norihiko Kamata², Hideki Hirayama¹ (RIKEN¹, Saitama Univ.²)

6:00 PM - 6:15 PM

[19p-B5-18] Development of short compositional wavelength p-type AlGaN transparent contact layerfor achieving high-efficiency DUV-LED

^○Noritoshi Maeda¹, Hideki Hirayama¹ (RIKEN¹)

6:15 PM - 6:30 PM

▲ [19p-B5-19] Non-polar M-plane AlGaN Multiple Quantum Well Light-Emitting Diode

^○(P)Ryan Banal¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT BRL¹)

6:30 PM - 6:45 PM

△ [19p-B5-20] Development of Vertical-type Deep Ultraviolet LED on Si substrate

^○(M1)Kentaro Shibano¹, Noriko Kurose², Tsutomu Araki¹, Yoshinobu Aoyagi² (Ritsumei Univ., Dept. of Photonicniv¹, Ritsumei Univ., The Research Organization of Science and Technology²)

6:45 PM - 7:00 PM

△ [19p-B5-21] Optimization of Dark current in Nitride-based hetero-field-effect-transistor-type photosensors

^○Mami Ishiguro¹, Kazuya Ikeda¹, Masataka Mizuno¹, Takuya Murase¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Aksaki^1,2 (Meijo Univ.¹, Akasaki Inst.,Nagoya Univ.²)

7:00 PM - 7:15 PM

[19p-B5-22] Electrical and Optical Output Modulation Characteristics of Nitride-based LETs

^○Kazuhide Kumakura¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Labs.¹)