Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures

[19p-P9-1~7] 14.2 Ultrathin films and quantum nanostructures

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P9 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-P9-1] High temperature growth of resonant tunneling structures composed of fluorides by using CoSi₂ buffer layers on Si substrates

^○Tsuyoshi Takahashi¹, Tomoaki Tamura¹, Keita Takahashi¹, Kazuo Tsutsui¹ (Tokyo Institute of Technology¹)

1:30 PM - 3:30 PM

[19p-P9-2] Negative differential resistance of nc-Si/CaF₂ resonant tunneling diode structures

^○Yuta Koshita¹, keita Suda¹, Yuya Kuwata¹, Jyunya Denda¹, Susumu Koike¹, Minato Segawa¹, Masahiro Watanabe¹ (Tokyo Institute of Technology¹)

1:30 PM - 3:30 PM

[19p-P9-3] Pulsed operation of resistance switching memory of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures

^○junya denda¹, keita suda¹, yuya kuwata¹, masahiro watanabe¹ (Tokyo Inst. of Tech.¹)

1:30 PM - 3:30 PM

[19p-P9-4] Analysis of resistance switching devices using Si/CaF₂/CdF₂ quantum-well structures

^○Keita Suda¹, Junya Denda¹, Yuya Kuwata¹, Masahiro Watanabe¹ (Tokyo Inst. of Tech.¹)

1:30 PM - 3:30 PM

[19p-P9-5] InAs nanowire double quantum dots coupled to microwave resonators

^○Hiroshi Tomizawa^1,2, Tomoko Fuse¹, Russell Deacon¹, Guoqiang Zhang³, Kouta Tateno³, Koji Ishibashi^1,2 (RIKEN¹, Tokyo Univ. of Sci.², NTT BRL³)

1:30 PM - 3:30 PM

[19p-P9-6] Time-resolved photoluminescence of InAs QDs fabricated by In-flush technique

^○Shigehiro Kitamura¹, Yinghui Wen¹, Masaya Sensyu¹, Keita Imai¹, Toshio Katsuyama¹, Yuji Hino², Nobuhiko Ozaki², Yoshimasa Sugimoto³ (Fukui Univ.¹, Wakayama Univ.², NIMS³)

1:30 PM - 3:30 PM

[19p-P9-7] Polarized photoluminescence spectra from multi-stacked InGaAs quantum dots structure fabricated by ultrahigh-rate MBE growth technique

^○(DC)Fumihiko Tanoue^1,2, Hiroharu Sugawara¹, Kouichi Akahane², Naokatsu Yamamoto² (Tokyo Metro. Univ.¹, NICT²)

Session information

[19p-P9-1~7] 14.2 Ultrathin films and quantum nanostructures

[19p-P9-1] High temperature growth of resonant tunneling structures composed of fluorides by using CoSi2 buffer layers on Si substrates

[19p-P9-2] Negative differential resistance of nc-Si/CaF2 resonant tunneling diode structures

[19p-P9-3] Pulsed operation of resistance switching memory of Si/CaF2/CdF2 resonant-tunneling quantum-well structures

[19p-P9-4] Analysis of resistance switching devices using Si/CaF2/CdF2 quantum-well structures

[19p-P9-5] InAs nanowire double quantum dots coupled to microwave resonators

[19p-P9-6] Time-resolved photoluminescence of InAs QDs fabricated by In-flush technique

[19p-P9-7] Polarized photoluminescence spectra from multi-stacked InGaAs quantum dots structure fabricated by ultrahigh-rate MBE growth technique

[19p-P9-1] High temperature growth of resonant tunneling structures composed of fluorides by using CoSi₂ buffer layers on Si substrates

[19p-P9-2] Negative differential resistance of nc-Si/CaF₂ resonant tunneling diode structures

[19p-P9-3] Pulsed operation of resistance switching memory of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures

[19p-P9-4] Analysis of resistance switching devices using Si/CaF₂/CdF₂ quantum-well structures