Session information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-B5-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-B5-1] Emission Color Control in InGaN-Based Regularly Arranged Nanocolumns

^○Ai Yanagihara¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotech. Research Center²)

9:15 AM - 9:30 AM

[20a-B5-2] Growth and Crystal Characterization of Regularly Arranged InGaN/GaN Superlattice Nacocolumns

^○Yusuke Kanematsu¹, kouta Asami¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

9:30 AM - 9:45 AM

[20a-B5-3] Selective Area Growth of InGaN-Based Regularly Arranged Nanocolumns by AlGaN Nanotemplate

^○Kouji Yamano¹, Katsumi Kishino^1,2, Hiroto Sekiguchi³, Akihiro Wakahara³ (Sophia Univ.¹, Sophia Nanotech Research center², Toyohashi Univ. Tech³)

9:45 AM - 10:00 AM

△ [20a-B5-4] Fabrication of single crystalline p-i-n nanocolumns on sputter-deposited AlN buffers

^○Hiroaki Hayashi¹, Taiichirou Ozaki¹, Isamu Matsuyama¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia NTC²)

10:00 AM - 10:15 AM

[20a-B5-5] Thinning down Regularly Arranged GaN Nanocolumns

^○Kota Asami¹, Katumi Kishino^1,2, Yusuke Kanematsu¹, Yusuke Igawa¹, Hiroaki Hayashi¹ (Sophia Univ.¹, Sophia Central Research lab.²)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[20a-B5-6] Crystal growth of regularly arranged GaN hexagonal nanorings

^○(M1)Toshifumi Kudo¹, Katsumi Kishino^1,2, Hiroaki Hayashi¹ (Sophia Univ¹, Sophia Nanotechnology Research Center²)

10:45 AM - 11:00 AM

[20a-B5-7] Photobenerated Carrier Dynamics of InGaN/GaN nanocolumns

^○(M1C)Naoki Shimosako¹, Yuta Inose¹, Kazuhiro Ema^1,2, Yusuke Igawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

11:00 AM - 11:15 AM

[20a-B5-8] Stimulated Emission Characteristics of Nitride Semiconductor Nanocolumns

^○(PC)Yuta Inose¹, Hiroaki Ueda¹, Naoki Shimosako¹, Kazuhiro Ema^1,2, Masaru Sakai³, Yusuke Igawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center², Univ. of Yamanashi³)

11:15 AM - 11:30 AM

[20a-B5-9] The possibility of the analysis of exciton dissociation processes using LO – phonon replica

^○Kei Gotou¹, Daichi Imai¹, kenji Takahashi¹, Ken Morita¹, Yoshihiro Ishitani¹, Hideto Miyake², Kazumasa Hiramatsu² (Graduate school of Engineering, Chiba Univ.¹, Graduate school of Engineering, Mie Univ.²)

11:30 AM - 11:45 AM

[20a-B5-10] Spatio-time-resolved cathodoluminescence studies on AlN epilayers grown on bulk AlN substrates prepared by the physical vapor transport method

^○Shigefusa Chichibu¹, Youichi Ishikawa¹, Masanori Tashiro¹, Kentaro Furusawa¹, Kouji Hazu¹, Jinqian Xie², Seiji Mita², Ramon Collazo³, Zlatko Sitar³ (Tohoku Univ.¹, Hexatech Inc.², NCSU³)

11:45 AM - 12:00 PM

[20a-B5-11] Emission dynamics of an isolated basal-plane stacking fault studied by using spatio-time-resolved cathodoluminescence method

^○kentaro furusawa¹, yoichi ishikawa¹, masanori tashiro¹, koji hazu¹, satoru nagao², hirotaka ikeda², kenji fujito², shigefusa chichibu¹ (IMRAM, Dept. Appleid Physics, Tohoku University¹, Mitsubishi Chemical Corp.²)

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