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Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[20a-D3-1~5] 15.7 Fundamentals of epitaxy

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-D3-1] Theoretical investigations for N-pair formation on the GaAs(001)-(2×4) surfaces

^○Tomonori Ito¹, Tatsuhiko Sugitani¹, Toru Akiyama¹, Kohji Nakamura¹ (Mie Univ.¹)

9:15 AM - 9:30 AM

[20a-D3-2] Electronic states and Structural Stability of the Mn Adsorbed GaAs(001) Surfaces

^○Atsushi Hagiwara¹, Akihiro Ohtake², Kazuya Okukita¹, Jun Nakamura¹ (The Univ. of Electro-Communications¹, NIMS²)

9:30 AM - 10:15 AM

[20a-D3-3] [INVITED]Epitaxial growth mechanisms-what we know and what we should know-

^○Tatau Nishinaga¹ (Univ. Tokyo¹)

Break (10:15 AM - 10:30 AM)

10:30 AM - 11:15 AM

[20a-D3-4] [INVITED]Selective Area Growth Mechanisms of Compound Semiconductor Nanowires

^○takashi fukui¹ (GS-IST, RCIQE､Hokkaido Univ¹)

11:15 AM - 12:00 PM

[20a-D3-5] [INVITED]Atomic Level In-Situ Monitoring During Epitaxial Growth of Group III Nitrides

Guwangxu Ju¹, Shingo Fuchi^2,5, Masao Tabuchi^2,3, Yoshikazu Takeda⁴, Yoshio Honda¹, Masafumi Yamaguchi^1,2, ^○Hiroshi Amano^1,2 (Nagoya Univ.¹, NUARC², NUSR³, ASTF-AichiSR⁴, Aoyama Gakuin Univ.⁵)