Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-D6-1] [Young Scientist Oral Presentation Award Speech](15 min.) Microstructure analysisi of β-FeSi₂ films fabricated on Ag coated Si substrates

^○Shunichi Motomura¹, Kouhei Hayashi¹, Masaru Itakura¹, Kensuke Akiyama² (Kyushu University¹, Kanagawa Industrial Technology Center²)

9:15 AM - 9:30 AM

[20a-D6-2] Epitaxial Growth of β-FeSi₂ film on Si(110) with Ag layer

^○Kensuke Akiyama¹, Ryo Takahashi¹, Yoshihisa Mastumoto¹, Shunichi Motomura³, Gohei Hayashi³, Hiroshi Funakubo², Masaru Itakura³ (Kanagawa Ind. Tec. Cen.¹, Tokyo Inst.², Kyusyu Univ.³)

9:30 AM - 9:45 AM

[20a-D6-3] Time-resolved PL measurement for the β-FeSi₂ film on Si(100) with Ag layer

^○Kensuke Akiyama¹, Takashi Suemasu² (Kanagawa Ind. Tech. Cen.¹, Tsukuba Univ.²)

9:45 AM - 10:00 AM

[20a-D6-4] PL lifetimes of IR PL peaks observed in β-FeSi₂ nanoparticles

^○Yoshikazu Terai¹, Yoshihito Maeda² (Kagoshima Univ.¹, Kyusyu Inst. Tech.²)

10:00 AM - 10:15 AM

[20a-D6-5] Photoluminescence properties of β-FeSi₂ nanocrystals：Cu doping effect

^○Tomoaki Hirata¹, Seiya Kagawa¹, Tomohiro Nagatsuyu¹, Yuki Kawakubo¹, Yoshihito Maeda¹ (Kyutech.CSE¹)

10:15 AM - 10:30 AM

[20a-D6-6] A study on carrier density of \beta-FeSi₂ formed by Fe/Si multi-layered Sputtering

^○Takafumi Katou¹, Taichi Inamura¹, Akito Sasaki³, Katsuaki Aoki³, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech IGSSE², Toshiba Material Co.,LTD³)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[20a-D6-7] Molecular beam epitaxy of BaSi₂ epitaxial films exceeding 1.5 μm on Si(111)

^○(M1)Ryota Takabe¹, kotaro Nakamura¹, Masakazu Baba¹, Weijie Du¹, Muhammad Ajmal Khan¹, Kaoru Toko¹, Masato Sasase², Kosuke Hara³, Noritaka Usami^3,4, Takashi Suemasu^1,4 (Tsukuba Univ.¹, The Wakasa Wan Energy Research Center², Nagoya Univ.³, JST-CREST⁴)

11:00 AM - 11:15 AM

[20a-D6-8] Evaluation of diffusion coefficients of Group V impurities (Sb and As) in MBE-grown BaSi₂ epilayers

^○Ning Zhang¹, Kotaro Nakamura¹, Masakazu Baba¹, Weijie Du¹, Shintaro Koike¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. of Tsukuba¹, CREST-JST²)

11:15 AM - 11:30 AM

[20a-D6-9] Formation and evaluation of BaSi₂ films by RF sputttering on a heated glass substrate

^○Nurul Amal Abdul Latiff¹, Takahiro Yoneyama¹, Tetsuo Shibutami², Keitaro Matsumaru², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys., Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

11:30 AM - 11:45 AM

[20a-D6-10] High-pressure Synthesis of Si Clathrates

^○Motoharu Imai¹, Takashi Taniguchi¹, Takahiro Yamada², Hisanori Yamane² (NIMS¹, IMRAM Tohoku Univ.²)

11:45 AM - 12:00 PM

[20a-D6-11] Characterization of Semiconducting Group IV Clathrate grown locally on Si Substrate

^○Tamio Iida¹, Atsushi Kitagawa¹, Akihiro Takagi¹, Hitoe Habuchi¹, Yoshiki Iwai², Akihiro Noguchi², Tomoya Sugiyama², Kazuho Sumiya², Fumitaka Ohashi², Fejfar Antonín³, Takayuki Ban², Tetsuji Kume², Shigeo Sasaki², Syuichi Nonomura² (Gifu Nat. Cal. Tech.¹, Gifu Univ.², Acad. Sci. Czech.³)

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