[20p-B4-1~8] 13.5 Si process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

[20p-B4-1] Schottky barrier elimination mechanism by pinnig at S-pair in Si

^○Koichi Kato¹, Takao Marukame¹, Yoshifumi Nishi¹, Yuichiro Mitani¹ (Toshiba R&D Cent.¹)

1:15 PM - 1:30 PM

[20p-B4-2] Ni silicidation rate in Si nanowires (1) Impact of the thermal history

^○Hiroki Yamashita¹, Yasuhiro Shikahama¹, Hiroki Kosugiyama¹, Shuichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Takashi Matsukawa², Meishoku Masahara², Takanobu Watanabe¹ (Waseda Univ.¹, AIST²)

1:30 PM - 1:45 PM

[20p-B4-3] Ni silicidation rate in Si nanowires (2) Ion dose dependency

^○Hiroki Kosugiyama¹, Yasuhiro Shikahama¹, Hiroki Yamashita¹, Shuichiro Hashimoto¹, Kouhei Takei¹, Jing Sun¹, Takashi Matsukawa², Meishoku Masahara², Takanobu Watanabe¹ (Waseda Univ.¹, AIST²)

1:45 PM - 2:00 PM

[20p-B4-4] Characterization of Thin NiSi₂ Films by Stacked Silicidation Sputtering Process with Kr Gas

^○Hiroaki Imamura¹, Taichi Inamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

2:00 PM - 2:15 PM

[20p-B4-5] Annealing Temperature Dependence of Electrical Characterization of P-doped NiSi₂ Electrodes on n-Ge Substrates

^○Masaaki Motoki¹, Ryo Yoshihara¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

2:15 PM - 2:30 PM

[20p-B4-6] Reduction of Schottky Barrier Height of Sn/n-Ge Contact

^○Akihiro Suzuki¹, Shunsuke Asaba¹, Jun Yokoi¹, Osamu Nakatsuka¹, Masashi Kurosawa^1,2, Mitsuo Sakashita¹, Noriyuki Taoka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow²)

2:30 PM - 2:45 PM

△ [20p-B4-7] Schottky Barrier Height Modulation of NiGe/Ge Junction by P segregation

^○Yuya Minoura¹, Takuji Hosoi¹, Jin Matsugaki², Shin-ichiro Kuroki², Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, Hiroshima Univ.²)

2:45 PM - 3:00 PM

[20p-B4-8] Improvement of As Activation in Ge with As⁺ Ion Implantation at Low Temperature

^○Takahiro Ono¹, Akio Ohta¹, Hiroaki Hanafusa¹, Hideki Murakami¹, Seiichiro Higashi¹, Seiichi Miyazaki² (Grad. School of AdSM, Hiroshima Univ.¹, Grad. School of Eng., Nagoya Univ.²)