Session information

Oral presentation

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[20p-C8-1~5] 13.6 Silicon devices / Integration technology

Fri. Sep 20, 2013 1:15 PM - 2:30 PM C8 (TC3 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:15 PM - 1:15 PM)

1:15 PM - 1:30 PM

▲ [20p-C8-1] KFM Measurement of Nano-Scale Selectively Doped Silicon Channel

^○Krzysztof Tyszka^1,2, Daniel Moraru¹, Takeshi Mizuno¹, Ryszard Jablonski², Michiharu Tabe¹ (Shizuoka Univ.¹, Warsaw Univ. Technol.²)

1:30 PM - 1:45 PM

▲ [20p-C8-2] Transport Spectroscopy of Dopant States in Randomly-Doped Single-Electron Transistors

^○(PC)Arup Samanta¹, Daniel Moraru¹, Earfan Hamid¹, Yohei Kuzuya¹, Lee The Anh², Takeshi Mizuno¹, Hiroshi Mizuta^2,3, Michiharu Tabe¹ (Reaserch Inst. of Elec, Shizuoka Univ.¹, JAIST², Faculty of Physical and Applied Sciences³)

1:45 PM - 2:00 PM

▲ [20p-C8-3] Ab - initio study of interactive-donor states of multiple P-atoms in Si nanoplates

^○Le The Anh¹, Arup Samanta², Daniel Moraru², Takeshi Mizuno², Manoharan Muruganathan¹, Michiharu Tabe², Hiroshi Mizuta^1,3 (JAIST¹, Shizuoka Univ.², Univ. of Southampton³)

2:00 PM - 2:15 PM

[20p-C8-4] Transport via dopant-quantum-dots fabricated by thermal diffusion through nano-masks

^○(P)Daniel Moraru¹, Arup Samanta¹, Le The Anh², Takeshi Mizuno¹, Hiroshi Mizuta^2,3, Michiharu Tabe¹ (Shizuoka Univ., RIE¹, JAIST², Univ. Southampton³)

2:15 PM - 2:30 PM

▲ [20p-C8-5] Observation of Individual Dopants in the Electrical Characteristics of Nanoscale pn Junctions

^○(D)Sri Purwiyanti^1,2, Daniel Moraru¹, Takeshi Mizuno¹, Djoko Hartanto², Michiharu Tabe¹ (Research Inst. of Elec., Shizuoka Univ.¹, Dep. of Elec., UI²)

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