Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D6 (MK 3F-301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:00 PM - 1:00 PM)

1:00 PM - 1:15 PM

△ [20p-D6-1] Electrical property of highly crystalline Mg₂Si films prepared by sputtering method

^○Shota Ogawa¹, Atsuo Katagiri¹, Masaaki Matsushima¹, Kensuke Akiyama^1,2, Yoshisato Kimura¹, Hiroshi Uchida³, Hiroshi Funakubo¹ (Tokyo Inst. of Tech.¹, Kanagawa Inds. Tech. Cent.², Sophia Univ.³)

1:15 PM - 1:30 PM

△ [20p-D6-2] Fabrication of amorphous Mg₂Si-based semiconductors by small addition of reactive sputtering gas

^○(M1)Shota Hara¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

1:30 PM - 1:45 PM

[20p-D6-3] Preparation of porous Si grains from Mg₂Si grains

^○Takahiro Yamada¹, Hiroshi Itahara², Hisanori Yamane¹ (IMRAM Tohoku Univ.¹, Toyota Central R&D Labs., Inc.²)

1:45 PM - 2:00 PM

[20p-D6-4] Energetic Consideration of A₂
Mg₁₂
Si₇(Z=1) and A₂
Mg₄
Si₃（Z=4）with A=Ca, Sr, and Ba

^○Yoji Imai¹, Yoshihisa Mori², Shigeyuki Nakamura³, Ken-ichi Takarabe² (AIST¹, Okayama Univ. Sci.², Tsuyama Nat'l College Technol.³)

2:00 PM - 2:15 PM

[20p-D6-5] Synthesis of a new hexagonal carbon nitride at high pressure and temperature

^○(PC)Masaya Sougawa¹, Kenichi Takarabe¹, Taku Okada² (Okayama University of Science¹, ISSP²)

2:15 PM - 2:30 PM

[20p-D6-6] Diffuse Reflection Spectroscopy of Nano Carbon Nitride

^○Kenta Kametomo¹, Ken-ichi Takarabe¹ (Okayama Univ. of Sci.¹)

2:30 PM - 2:45 PM

△ [20p-D6-7] Microscopic mechanism of band-gap variations in SiC polytypes based on ab initio calculations: Finding of peculiar electron states floating in internal space

^○Yu-ichiro Matsushita^1,2, Atsushi Oshiyama¹ (The University of Tokyo¹, Max-Planck Institute of Microstructure Physics²)

2:45 PM - 3:00 PM

[20p-D6-8] First principles study for electrical transport of HfO₂-based resistive memories

^○Takehide Miyazaki¹, Hisao Nakamura¹, Kengo Nishio¹, Hisashi Shima², Hiroyuki Akinaga², Yoshihiro Asai¹ (AIST-NRI¹, AIST-NERI²)

Session information

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

△ [20p-D6-1] Electrical property of highly crystalline Mg2Si films prepared by sputtering method

△ [20p-D6-2] Fabrication of amorphous Mg2Si-based semiconductors by small addition of reactive sputtering gas

[20p-D6-3] Preparation of porous Si grains from Mg2Si grains

[20p-D6-4] Energetic Consideration of A2Mg12Si7(Z=1) and A2Mg4Si3（Z=4）with A=Ca, Sr, and Ba