Poster presentation

[17p-P11-1~1] 16.2 Processing technologies and devices

Tue. Sep 17, 2013 1:30 PM - 3:30 PM P11 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

1:30 PM - 3:30 PM

[17p-P11-1] Evaluation of Ge film prepared by electrodeposition

^○Yasutaka Uchida¹, Daisuke Shirahama¹, Tomohiro Nakajima¹, Tomoko Funayama¹, Yoshiaki Kogure¹, Kazuyoshi Ueno² (Teikyo Univ. of Sci.¹, Shibaura Inst. Tech.²)

Oral presentation

[18a-A4-1~9] 16.2 Processing technologies and devices

Wed. Sep 18, 2013 9:15 AM - 12:00 PM A4 (TC1 2F-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:15 AM - 9:45 AM

[18a-A4-1] [INVITED]Film properties of Silicon ink

^○Takashi Masuda^1,2, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ERATO², JST-ALCA³)

9:45 AM - 10:00 AM

[18a-A4-2] Effect of Anneal on Structural Property Distribution of Solution-Processed a-Si:H Films Along Thickness Direction

^○(M2)Yoo Sakuma¹, Keisuke Ohdaira^1,2, Takashi Masuda^1,3, Zhongrong Shen^1,2, Hideyuki Takagishi^1,2, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ALCA², JST-ERATO³)

10:00 AM - 10:15 AM

[18a-A4-3] Large Area Transfer of Silicon Films with Midair Cavity Using Meniscus Force

^○Shogo Nakamura¹, Kohei Sakaike¹, Muneki Akazawa¹, Takashi Fukunaga¹, Shohei Hayashi¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

10:15 AM - 10:30 AM

[18a-A4-4] Local Area Transfer of Tiny Si Films with Midair Cavity Using Meniscus Force

^○Takashi Fukunaga¹, Kohei Sakaike¹, Shogo Nakamura¹, Muneki Akazawa¹, Seiichiro Higashi¹ (Graduate School of Advanced Sciences of Matter, Hiroshima Univ.¹)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-A4-5] Synthesis and characterization of Si clathrate thin films

^○(PC)Fumitaka Ohashi¹, Yoshi Iwai¹, Tomoya Sugiyama¹, Akihiro Noguchi¹, Kazuki Nagai¹, Masashi Hattori¹, Takuya Ogura¹, Roto Himeno¹, Takayuki Ban¹, Tetsuji Kume¹, Shigeo Sasaki¹, Shuichi Nonomura¹ (Gifu Univ.¹)

11:00 AM - 11:15 AM

[18a-A4-6] Reduction of Na concentrations in type II Si clathrate grown on Si substrate

^○Kazuhide Hayashi¹, Shogo Sunaba¹, Masataka Nomura¹, Kosuke Ota¹, Yoshiki Iwai¹, Fumitaka Ohashi¹, Takayuki Ban¹, Tetsuji Kume¹, Shuichi Nonomura¹ (Gifu Univ.¹)

11:15 AM - 11:30 AM

[18a-A4-7] Characterization of Ge/a-Si/Metal Structures for Infrared Sensor

^○Yuhei Nakamura¹, Jun Takarada¹, Akio Furukawa¹ (Tokyo Univ. of Science¹)

11:30 AM - 11:45 AM

[18a-A4-8] Calculation of Temperature Coefficient of Resistance for Double Potential Barrier

^○Jun Takarada¹, Ryosuke Miyachi¹, Yuhei Nakamura¹, Akio Furukawa¹ (Tokyo Univ. of Science¹)

11:45 AM - 12:00 PM

[18a-A4-9] Controlling of VO2 surface state by sputtering deposition and lamp anneal

^○Kazutaka Nishikawa¹, Yoshihiro Kishida¹, Yasuhiko Takeda¹ (TCRDL¹)

Sessions

16. Amorphous and Microcrystalline Materials » 16.2 Processing technologies and devices