The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-B5-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

9:30 AM - 9:45 AM

[16a-B5-3] Film Thickness Dependence of In-rich InGaN Epilayers Grown by RF-MBE

○Masahiro Sakamoto1, Ka Ou1, Tsutomu Araki1, Yasushi Nanishi1,2, Eulioon Yoon2 (Ritsumeikan University1, Seoul National University2)

Keywords:InGaN,膜厚,MBE