The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-B5-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

10:00 AM - 10:15 AM

[16a-B5-5] Growth of AlOx thin film on AlN/GaN heterostructures by in-situ RF-MBE

○Yohei Sugiura1,2, Tohru Honda1, Masataka Higashiwaki2 (Kogakuin Univ.1, NICT2)

Keywords:MBE,窒化物半導体,酸化物半導体