The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-B5-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

11:15 AM - 11:30 AM

[16a-B5-9] Helicon-wave-excited-plasma sputtering epitaxy of Nb-doped n++-type (001) anatase films on Mg-doped p-type (0001) GaN and their transport prooerties

Masahiro Yamagishi1, Kouji Hazu1, Tomomi Ohtomo1, Youichi Ishikawa1, Kentaro Furusawa1, Tokuyuki Nakayama2, Shigefusa Chichibu1 (IMRAM and Appl. Phys. Dept., Tohoku Univ.1, Sumitomo Metal Mining Co., Ltd.2)

Keywords:二酸化チタン