9:30 AM - 11:30 AM
[16a-P2-10] Deep level transient spectroscopic study on Eu-doped GaN grown by organometallic vapor phase epitaxy
Keywords:Eu添加GaN,DLTS
Poster presentation
14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices
Mon. Sep 16, 2013 9:30 AM - 11:30 AM P2 (Davis Memorial Auditorium)
9:30 AM - 11:30 AM
Keywords:Eu添加GaN,DLTS