The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

15. Crystal Engineering » 15.8 Crystal evaluation, nanoimpurities and crystal defects

[16p-B2-1~14] 15.8 Crystal evaluation, nanoimpurities and crystal defects

Mon. Sep 16, 2013 1:30 PM - 5:15 PM B2 (TC2 1F-102)

1:30 PM - 1:45 PM

[16p-B2-1] Generation of vacancies on growth interface and of interstitials inside crystal during silicon melt growth [1] By heating melt

Takao Abe1, Toru Takahashi1, Kooun Shirai2 (Shin-Etsu Handotai1, Osaka Univ.2)

Keywords:silicon,点欠陥