1:30 PM - 1:45 PM
[16p-B2-1] Generation of vacancies on growth interface and of interstitials inside crystal during silicon melt growth [1] By heating melt
Keywords:silicon,点欠陥
Oral presentation
15. Crystal Engineering » 15.8 Crystal evaluation, nanoimpurities and crystal defects
Mon. Sep 16, 2013 1:30 PM - 5:15 PM B2 (TC2 1F-102)
1:30 PM - 1:45 PM
Keywords:silicon,点欠陥