[16p-B2-1~14] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[16p-B2-6] Vacancies Evaluation of CZ silicon crystal by low temperature ultrasonic measurement and secondary defect measurement (3): Sum rule for vacancy concentrations and hidden BMD

^○Hiroshi Kaneta^1,2, Hiroyuki Saito³, Kazuki Okabe^2,3, Kazuhiko Kashima³, Yoshihiko Saito⁴, Yuichi Nemoto², Terutaka Goto² (Kyushu Inst. of Technology¹, Niigata University², Global Wafers Japan Co., Ltd.³, Toshiba Corp.⁴)

Keywords:シリコン,原子空孔,ボイド