[16p-B4-1~8] Joint session K

△ [16p-B4-1] Growth temperature dependence of (\overline{2}01) β-Ga₂O₃ homoepitaxy by PLD method

^○Akira Mukai¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui³, Akito Kuramata², Shigenobu Yamakoshi², Akira Ohtomo^1,4 (Tokyo Tech.¹, Tamura Corp.², Koha Co., Ltd.³, MCES⁴)

Keywords:酸化ガリウム,PLD