The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-B5-1~16] 15.4 III-V-group nitride crystals

Mon. Sep 16, 2013 1:00 PM - 5:15 PM B5 (TC2 2F-201)

2:45 PM - 3:00 PM

[16p-B5-8] Effect of phonon transport on the processes reducing the band-edge emission efficiency in InN films

○Daichi Imai1, Yoshihiro Ishitani1, Xinqiang Wang2, Akihiko Yoshikawa3 (Graduate school of Engineering, Chiba Univ.1, School of physics, Peking Univ.2, Center for SMART GIR, Chiba Univ.3)

Keywords:窒化インジウム,非輻射再結合,フォノン輸送