Study on resistance switching of WOx prepared by reactive sputtering at the room temperature

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

Mon. Sep 16, 2013 2:30 PM - 6:00 PM D3 (MK 2F-201)

4:30 PM - 4:45 PM

^○Akitoshi Nakane¹, Keisuke Takamizawa¹, Takahiro Hiroi¹, Masashi Arita¹, Yasuo Takahashi¹, Tohru Yamada¹ (IST, Hokkaido Univ.¹)

Keywords:抵抗変化型メモリ