Initial stage of 1st graphene layer growth on SiC(0001) and role of step

Presentation information

Oral presentation

17. Nanocarbon Technology » 17.1 Growth technology

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B1 (TC2 1F-101)

11:00 AM - 11:15 AM

^○Hiroyuki Kageshima¹, Hiroki Hibino¹, Hiroshi Yamaguchi¹, Masao Nagase² (NTT Basic Research Labs.¹, Univ. Tokushima²)

Keywords:グラフェン,ＳｉＣ,理論