SiC dry-etching using F<sub>2</sub>+He gas plasma

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

9:00 AM - 9:15 AM

^○Takaya Tanaka¹, Satoko Shinkai², Haruna Oda³, Shinich Motoyama³ (Kyushu Inst. of Tech.¹, CMS, Kyushu Inst. of Tech.², SAMCO Inc.³)

Keywords:SiC,F2,エッチング