The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-B3-1~11] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

9:15 AM - 9:30 AM

[17a-B3-2] Electrical characteristics of directly bonded interface between Si and SiC

○Yukihiro Sasada1, Takamasa Kurumi1, Ryosuke Araki1, Hideo Shimizu1, Hiroyuki Kinoshita1, Masahiro Yoshimoto1 (Department of Electronics, Kyoto Inst. of Tech.1)

Keywords:SiC,heterojunction,electrical propertis