[17a-B4-1~12] Joint session K

△ [17a-B4-3] Effects of Ar partial pressure during the sputtering deposition on properties of novel oxynitride semiconductor ZnInON fabricated by RF magnetron sputtering

^○Koichi Matsushima¹, Ryota Shimizu¹, Yamashita Yamashita¹, Kunihiro Kamataki¹, Hyunwoong Seo¹, Giichiro Uchida¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,2 (Kyushu Univ.¹, JST-PRESTO²)

Keywords:スパッタリング,酸窒化物半導体,ZnInON