The 74th JSAP Autumn Meeting,2013

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Oral presentation

08. Plasma Electronics » 8.4 Plasma etching

[17a-C2-1~10] 8.4 Plasma etching

Tue. Sep 17, 2013 9:15 AM - 11:45 AM C2 (TC3 1F-102)

10:15 AM - 10:30 AM

△ [17a-C2-5] Interface trap generation at SiO2 structure by CHxFy plasma etching

○Takushi Shigetoshi1, Masanaga Fukasawa1, Kazunori Nagahata1, Tetsuya Tatsumi1 (Sony Corp.1)

Keywords:エッチング,ダメージ