[17p-B2-1~14] 17.4 Device application

△ [17p-B2-3] Reduction of the contact resistivity at CNT/SiC interface by heavy doping

^○Kazuma Suzuki¹, Masahumi Inaba¹, Megumi Shibuya¹, Miho Myodo¹, Atsushi Hiraiwa¹, Yoshiho Masuda², Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (Waseda Univ.¹, Nagoya Univ.²)

Keywords:接触抵抗,カーボンナノチューブ,炭化珪素