Defects in HPSI 4H-SiC studied by alpha particles induced charge transient spectroscopy

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Sep 17, 2013 1:30 PM - 6:00 PM B3 (TC2 1F-105)

2:45 PM - 3:00 PM

^○(PC)Naoya Iwamoto¹, Natsuko Fujita¹, Takahiro Makino¹, Shinobu Onoda¹, Takeshi Ohshima¹ (JAEA¹)

Keywords:高純度半絶縁性炭化ケイ素,欠陥評価,アルファ粒子