[17p-B5-1~21] 13.3 絶縁膜技術

▲ [17p-B5-11] Atomically Flat Planarization of Ge (110) and (100) Surface by H2 Annealing

^○西村知紀^1,2，矢嶋赳彬^1,2，長汐晃輔^1,2，鳥海明^1,2 (東大院工¹，JST-CREST²)

キーワード：germanium